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HANBit
HMF51232M4G
FLASH-ROM MODULE 2MByte (512K x 32-Bit) Part No. HMF51232M4G GENERAL DESCRIPTION
The HMF51232M4G is a high-speed flash read only memory (FROM) module containing 524,288 words organized in a x32bit configuration. The module consists of four 512Kx 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Four chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition, the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
w Access time : 55,70, 90 and 120ns w High-density 2MByte design w High-reliability, low-power design w Single + 5V 0.5V power supply w Easy memory expansion wAll inputs and outputs are TTL- compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sector erases architecture w Sector group protection w Temporary sector group unprotection w Part Identification HMF51232M4G: Gold Plate Lead PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
PIN ASSIGNMENT
SYMBOL Vss A3 A2 A1 A0 Vcc A11 /OE A10 Vcc NC /CE_LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 /WE A17 A14 A13 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL Vcc DQ8 DQ9 DQ10 NC Vcc /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 A18 A16 Vss A6 Vcc A5 A4 Vcc NC /CE_UM1 DQ23 DQ16 PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 Vcc A15 A12 A7 Vcc A8 A9 DQ24 DQ25 DQ26 NC /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27 Vss
OPTIONS
w Timing 55ns access 70ns access 90ns access 120ns access w Package 72-pin SIMM
MARKING
- 55 - 70 - 90 - 120
16 17 18 19 20 21 22 23
M
24
72-PIN SIMM TOP VIEW
FUNCTIONAL BLOCK DIAGRAM
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HMF51232M4G
DQ0 - DQ31 A0 - A18
32 19
A0-18 /WE /OE /CE DQ 0-7
U5
/CE_LL1 A0-18 /WE /OE /CE /CE_LM1 A0-18 /WE /OE /CE /CE_UM1 A0-18 /WE /OE /WE /OE /CE /CE_UU1 DQ24-31 DQ16-23 DQ 8-15
U6
U7
U8
TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE Note : X means don't care /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Dout Din POWER STANDBY ACTIVE ACTIVE ACTIVE
ABSOLUTE MAXIMUM RATINGS
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PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature SYMBOL VIN,OUT VCC TSTG
HMF51232M4G
RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +125oC
Operating Temperature TA -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Vcc for 5% device Supply Voltages Vcc for 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0
DC AND OPERATING CHARACTERISTICS (0oC TA 70 oC ; Vcc = 5V 0.5V )
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max /CE= VIH ICC3 VLKO 4 3.2 20 4.2 mA V ICC2 120 160 mA TEST CONDITIONS Vcc=Vcc max, VIN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, SYMBOL IL1 IL0 VOH VOL ICC1 80 2.4 0.45 120 MIN MAX 1.0 1.0 UNITS A A V V mA
ERASE AND PROGRAMMING PERFORMANCE
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LIMITS PARAMETER MIN. Sector Erase Time TYP. 1 MAX. UNIT
HMF51232M4G
COMMENTS Excludes 00H programming 8 sec prior to erasure Excludes system-level
Byte Programming Time
-
7
300
us overhead Excludes system-level
Chip Programming Time
-
3.6
10.8
sec overhead
CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance VIN = 0 VOUT = 0 VIN = 0 6 8.5 7.5 7.5 12 9 pF pF pF TYP. MAX UNIT
Notes : Test conditions TA = 25o C, f=1.0 MHz.
TEST CONDITIONS
TEST CONDITION Output load Output load Capacitance, CL Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0~3 1.5 1.5 -55 1 TTL gate 100 20 0.45~2.4 0.8 2.0 pF ns V V V ALL OTHERS UNIT
AC CHARACTERISTICS u Read Only Operations Characteristics
PARAMETE TEST R SYMBOLS tRC tACC Address to Output Delay /OE = VIL
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-55 DESCRIPTION SETUP Read Cycle Time /CE = VIL MIN MAX
-70 MIN MAX
-90 MIN MAX
-120 MIN MAX
UNIT
55 55
70 70
90 90
120 120
ns ns
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tCE tOE tDF tDF Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, tQH /CE or /OE, Whichever Occurs First 0 0 0 18 0 /OE = VIL 55 30 0 20 70 30 0
HMF51232M4G
90 35 0 20 35 120 50 ns ns ns ns
0
ns
5.0V
2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETE R SYMBOLS tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width 30 35 40 25 45 30 0 0 0 0 0 45 50 55 70 0 45 45 50 50 90 120 ns ns ns ns ns ns ns ns ns ns DESCRIPTION MIN -55 TYP MIN -70 MAX MIN -90 MAX MIN -120 MAX UNIT
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tWPH tWHWH1 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time 20 7 1 50
HMF51232M4G
ns s sec s
u Erase/Program Operations Alternate /CE Controlled Writes
PARAMETE R SYMBOLS tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recover Time Before Write /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation (Note) 30 ns 35 20 7 1 40 25 ns ns 45 30 0 0 0 0 45 50 55 ns 70 0 45 45 50 50 90 120 ns ns ns ns ns ns ns ns ns ns s sec DESCRIPTION MIN -55 TYP MIN -70 MAX MIN -90 MAX MIN -120 MAX UNIT
Notes : This does not include the preprogramming time.
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u READ OPERATIONS TIMING
HMF51232M4G
u RESET TIMING
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u PROGRAM OPERATIONS TIMING
HMF51232M4G
u CHIP/SECTOR ERASE OPERATION TIMINGS
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u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF51232M4G
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF51232M4G
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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PACKAGE DIMENSIONS
HMF51232M4G
U5
U6
U7
U8
0.25 mm MAX
2.54 mm MIN
1.27
Gold: 1.040.10 mm Solder: 0.9140.10 mm
1.270.08mm
(Solder & Gold Plating)
ODERING INFORMATION
Part Number Density Org. Package Component Number 4EA 4EA 4EA 4EA Vcc SPEED
HMF51232M4G-55 HMF51232M4G-70 HMF51232M4G-90 HMF51232M4G-120
2MByte 2MByte 2MByte 2MByte
512Kx32bit 512Kx32bit 512Kx32bit 512Kx32bit
72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM 72 Pin-SIMM
5.0V 5.0V 5.0V 5.0V
55ns 70ns 90ns 120ns
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